Cutting-edge types may be able to experience the next step after flash memory as early this year. Intel and STMicroelectronics say they're ready to start limited production of Phase Change Memory (PRAM) devices late this year.
PRAM relies on the properties of chalcogenide glass, which changes between crystalline and amorphous states with the application of heat, to store binary data. PRAM promises to be 100,000 times faster than current flash chips and much more durable. On the down-side, it needs a lot of electricity and special manufacturing techniques to be incorporated into devices.
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